The probe card is a core part that makes its probes contact with the electrodes of the semiconductor devices and applies electrical signals to determine whether the chips on the wafer are defective.
WithMEMS utilizes its proprietary MEMS process technology to provide core parts and high-precision test solutions required to produce memory/system semiconductor (non-memory) test probe cards.
TRAMS is a proprietary vertical probe card solution for testing non-memory devices such as Logic and SoC. It provides excellent contact stability by directly contacting ST pad or PCB pad without floating by free load, and implements low force, low scrub and high alignment precision.
We utilize our own design and MEMS process technology to manufacture complex structures of metal housing and metal spring simultaneously in a batch process. We have diversified our product portfolios by changing in materials and designs according to applications and required specifications, and developed and supplied them in the form of Vertical Probe Head type applied with TRAMS Probe.
|Items||Pad Application||Bump Application|
|Array Min. Pitch||170um||80um||120um||80um|
|In-line Min. Pitch||70um||55um||80um||55um|
|Min. Pad Dimension||40um||40um||40um||40um|
|Alignment Accuracy(X/Y)||± 5um||± 5um||± 5um||± 5um|
|Planarity(Z)||± 7um||± 7um||± 7um||± 7um|
|Typical Overdrive||2mil(Max. 4mil)||2mil(Max. 3mil)||2mil(Max. 3mil)||2mil(Max. 3mil)|
|Probe Type||MEMS Vertical||MEMS Vertical||MEMS Vertical||MEMS Vertical|
|Material||Ni Alloy(Rh Tip)||Ni Alloy(Rh Tip)||Ni Alloy||Ni Alloy|
|Tip Diameter||10 x 10um||10 x 10um||60 x 55um||36 x 33um|
|Body Size||230 x 44um||90 x 36um||146 x 60um||90 x 36um|
|Leakage: Pin to Ground||＜10nA||＜10nA||＜10nA||＜10nA|
|Min. Current per Pin||500mA||300~400mA||500mA||300~400mA|
|Typical Contact resistance||0.5Ω||0.5Ω||0.5Ω||0.5Ω|
|Max. Contact resistance||＜2Ω||＜2Ω||＜2Ω||＜2Ω|
|Probe Mark Dimension||14~16um||14~16um|
We have also utilized our own MEMS process technology to develop and mass-produce high-precision MEMS blade probes for application in DRAM/NAND probe cards, CIS and DC probe cards.
The products can be applied with Rh (Rhodium) tips, and are capable of achieving the highest level of thickness precision (within ±1 um) through CMP and 3D AOI inspections.
The products can be customized through changes in materials and designs according to applications and required specifications.
We manufacture laminated circuit boards with complex structure by applying photosensitive polyimide material to a large-area (300 mm) ceramic substrate (MLC) that is applied to DRAM/NAND probe cards, utilizing core element technologies such as lithography, electro Plating and CMP, and connecting multiple layers of internal electrode circuits and vias. We are also developing Embedded Thin Film Resist process separately.
If you have any questions regarding core parts of semiconductor probe cards, please feel free to contact us.