WITHMEMS

PROBE CARD SOLUTIONS

The probe card is a core part that makes its probes contact with the electrodes of the semiconductor devices and applies electrical signals to determine whether the chips on the wafer are defective.
WithMEMS utilizes its proprietary MEMS process technology to provide core parts and high-precision test solutions required to produce memory/system semiconductor (non-memory) test probe cards.

• System semiconductor (non-memory) probe card: Development and mass production of TRAMS Vertical PH (Probe Head) and ST
• Memory (DRAM/NAND) probe card: Development and mass production of 2D Blade Pin (Rh) and 300mm Ceramic Laminated RDL
• Development and mass production of customized parts according to customer requirement

TRAMS Vertical Probe Head

TRAMS is a proprietary vertical probe card solution for testing non-memory devices such as Logic and SoC. It provides excellent contact stability by directly contacting ST pad or PCB pad without floating by free load, and implements low force, low scrub and high alignment precision.
We utilize our own design and MEMS process technology to manufacture complex structures of metal housing and metal spring simultaneously in a batch process. We have diversified our product portfolios by changing in materials and designs according to applications and required specifications, and developed and supplied them in the form of Vertical Probe Head type applied with TRAMS Probe.

· TRAMS is a reverse of ‘SMART’
· TRAMS is a smart and innovative MEMS vertical probing solution for Logic, SoC
· TRAMS is a unique brand and IP of WITHMEMS
· TRAMS is a unique structure that consists of a metal housing and metal spring
· TRAMS is designed and fabricated by In-house MEMS process

Terms -

※ Example : TRAMS-B80 : Min 80um Pitch Probe for bump

Specification of TRAMS
Items	Pad Application		Bump Application
Items	TRAMS-P170	TRAMS-P80	TRAMS-B120	TRAMS-B80
Array Min. Pitch	170um	80um	120um	80um
In-line Min. Pitch	70um	55um	80um	55um
Min. Pad Dimension	40um	40um	40um	40um
Alignment Accuracy(X/Y)	± 5um	± 5um	± 5um	± 5um
Planarity(Z)	± 7um	± 7um	± 7um	± 7um
Operating Temperature	-40~125℃	-40~100℃	-40~100℃	-40~100℃
Pin Force	2.0gf/mil	0.5-1.0gf/mil	1.5-2.0gf/mil	0.5-1.0gf/mil
Typical Overdrive	2mil(Max. 4mil)	2mil(Max. 3mil)	2mil(Max. 3mil)	2mil(Max. 3mil)
Typical Touchdown	700K	600K	700K	600K
Probe Type	MEMS Vertical	MEMS Vertical	MEMS Vertical	MEMS Vertical
Material	Ni Alloy(Rh Tip)	Ni Alloy(Rh Tip)	Ni Alloy	Ni Alloy
Tip Diameter	10 x 10um	10 x 10um	60 x 55um	36 x 33um
Body Size	230 x 44um	90 x 36um	146 x 60um	90 x 36um
Probe Length	2.7mm	2.5mm	3.0mm	2.7mm
Leakage: Pin to Ground	＜10nA	＜10nA	＜10nA	＜10nA
Min. Current per Pin	500mA	300~400mA	500mA	300~400mA
Typical Contact resistance	0.5Ω	0.5Ω	0.5Ω	0.5Ω
Max. Contact resistance	＜2Ω	＜2Ω	＜2Ω	＜2Ω
Probe Mark Dimension	14~16um	14~16um

VPC PH Assembly Procedure

MEMS Blade Probe

We have also utilized our own MEMS process technology to develop and mass-produce high-precision MEMS blade probes for application in DRAM/NAND probe cards, CIS and DC probe cards.
The products can be applied with Rh (Rhodium) tips, and are capable of achieving the highest level of thickness precision (within ±1 um) through CMP and 3D AOI inspections.
The products can be customized through changes in materials and designs according to applications and required specifications.

Thin-Film Multi Layer Polyimide

We manufacture laminated circuit boards with complex structure by applying photosensitive polyimide material to a large-area (300 mm) ceramic substrate (MLC) that is applied to DRAM/NAND probe cards, utilizing core element technologies such as lithography, electro Plating and CMP, and connecting multiple layers of internal electrode circuits and vias. We are also developing Embedded Thin Film Resist process separately.