Semiconductor Micro Test Solution

Innovative Core Components and Probing Solution for Probe Card

PROBE CARD SOLUTIONS

The probe card is a core part that makes its probes contact with the electrodes of the semiconductor devices and applies electrical signals to determine whether the chips on the wafer are defective.
WithMEMS utilizes its proprietary MEMS process technology to provide core parts and high-precision test solutions required to produce memory/system semiconductor (non-memory) test probe cards.

  • • System semiconductor (non-memory) probe card: Development and mass production of TRAMS Vertical PH (Probe Head) and ST
  • • Memory (DRAM/NAND) probe card: Development and mass production of 2D Blade Pin (Rh) and 300mm Ceramic Laminated RDL
  • • Development and mass production of customized parts according to customer requirement

TRAMS Vertical Probe Head

TRAMS is a proprietary vertical probe card solution for testing non-memory devices such as Logic and SoC. It provides excellent contact stability by directly contacting ST pad or PCB pad without floating by free load, and implements low force, low scrub and high alignment precision.
We utilize our own design and MEMS process technology to manufacture complex structures of metal housing and metal spring simultaneously in a batch process. We have diversified our product portfolios by changing in materials and designs according to applications and required specifications, and developed and supplied them in the form of Vertical Probe Head type applied with TRAMS Probe.

  • · TRAMS is a reverse of ‘SMART
  • · TRAMS is a smart and innovative MEMS vertical probing solution for Logic, SoC
  • · TRAMS is a unique brand and IP of WITHMEMS
  • · TRAMS is a unique structure that consists of a metal housing and metal spring
  • · TRAMS is designed and fabricated by In-house MEMS process
Pad Application
Bump Application
Bump Application

Terms -

Application type
- Pad contact : P
- Bump(solder/cu-pillar) : B

Available Minimum Pitch (3 or 2 digits)
- 170: 170um, 120: 120um, 80: 80um pitch
- Array Pitch

Customized Design (Special)
- Alphabet : A, B, C …
- Material Changes(Alloy), Design, CCC Improvement

※ Example : TRAMS-B80 : Min 80um Pitch Probe for bump
Specification of TRAMS
Items Pad Application Bump Application
TRAMS-P170 TRAMS-P80 TRAMS-B120 TRAMS-B80
Array Min. Pitch 170um 80um 120um 80um
In-line Min. Pitch 70um 55um 80um 55um
Min. Pad Dimension 40um 40um 40um 40um
Alignment Accuracy(X/Y) ± 5um ± 5um ± 5um ± 5um
Planarity(Z) ± 7um ± 7um ± 7um ± 7um
Operating Temperature -40~125℃ -40~100℃ -40~100℃ -40~100℃
Pin Force 2.0gf/mil 0.5-1.0gf/mil 1.5-2.0gf/mil 0.5-1.0gf/mil
Typical Overdrive 2mil(Max. 4mil) 2mil(Max. 3mil) 2mil(Max. 3mil) 2mil(Max. 3mil)
Typical Touchdown 700K 600K 700K 600K
Probe Type MEMS Vertical MEMS Vertical MEMS Vertical MEMS Vertical
Material Ni Alloy(Rh Tip) Ni Alloy(Rh Tip) Ni Alloy Ni Alloy
Tip Diameter 10 x 10um 10 x 10um 60 x 55um 36 x 33um
Body Size 230 x 44um 90 x 36um 146 x 60um 90 x 36um
Probe Length 2.7mm 2.5mm 3.0mm 2.7mm
Leakage: Pin to Ground <10nA <10nA <10nA <10nA
Min. Current per Pin 500mA 300~400mA 500mA 300~400mA
Typical Contact resistance 0.5Ω 0.5Ω 0.5Ω 0.5Ω
Max. Contact resistance <2Ω <2Ω <2Ω <2Ω
Probe Mark Dimension 14~16um 14~16um

VPC PH Assembly Procedure

Si3N4 Laser Drilling
Guide Plate Assy
TRAMS Probe Insert
Probe Card Assy

MEMS Blade Probe

We have also utilized our own MEMS process technology to develop and mass-produce high-precision MEMS blade probes for application in DRAM/NAND probe cards, CIS and DC probe cards.
The products can be applied with Rh (Rhodium) tips, and are capable of achieving the highest level of thickness precision (within ±1 um) through CMP and 3D AOI inspections.
The products can be customized through changes in materials and designs according to applications and required specifications.

Thin-Film Multi Layer Polyimide

We manufacture laminated circuit boards with complex structure by applying photosensitive polyimide material to a large-area (300 mm) ceramic substrate (MLC) that is applied to DRAM/NAND probe cards, utilizing core element technologies such as lithography, electro Plating and CMP, and connecting multiple layers of internal electrode circuits and vias. We are also developing Embedded Thin Film Resist process separately.

PRODUCTS

CONTACT US

If you have any questions regarding core parts of semiconductor probe cards, please feel free to contact us.

TEL

+82-31-370-3220

E-Mail

jkpark@withmems.com

FAX

+82-31-370-3299